absolute maximum ratings thermal and mechanical characteristics g d s single die fredfet unit av mj a unit w c/w c oz g inlbf nm ratings 75 47 230 30 1580 37 min typ max 1040 0 .12 0.11 -55 150 300 0 .22 6.2 10 1.1 parameter continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage single pulse avalanche energy 2 avalanche current, repetitive or non-repetitive characteristic total power dissipation @ t c = 25c junction to case thermal resistance case to sink thermal resistance, flat, greased surface operating and storage junction temperature range soldering temperature for 10 seconds (1.6mm from case) package weight mounting torque ( to-264package), 4.40 or m3 screw symbol i d i dm v gs e as i ar symbol p d r jc r cs t j ,t stg t l w t torque typical applications ?? zvs?phase?shifted?and?other?full?bridge ???half?bridge ???pfc?and?other?boost?converter ?? buck?converter ???single?and?two?switch?forward ???flyback features ???fast?switching?with?low?emi ? ???low?t rr ?for?high?reliability ? ???ultra?low?c rss ?for?improved?noise?immunity ? ???low?gate?charge ? ???avalanche?energy?rated ???rohs?compliant to-264 t-max ? APT75F50B2 apt75f50l 500v,?75a,?0.075 ? ?max,?t rr 310ns APT75F50B2 apt75f50l n-channel?fredfet power mos 8 ? is a high speed, high voltage n-channel switch-mode power mosfet. this 'fredfet' version has a drain-source (body) diode that has been optimized for high reliability in zvs phase shifted bridge and other circuits through reduced t rr , soft recovery, and high recovery dv/dt capability. low gate charge, high gain, and a greatly reduced ratio of c rss /c iss result in excellent noise immunity and low switching loss. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low emi and reliable paralleling, even when switching at very high frequency. microsemi website - http://www.microsemi.com 050-8126 rev c 05-2009 downloaded from: http:///
static characteristics t j ?=?25c?unless?otherwise?speciied dynamic characteristics t j ?=?25c?unless?otherwise?speciied source-drain diode characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 starting at t j = 25c, l = 2.31mh, r g = 25 ? , i as = 37a. 3 pulse test: pulse width < 380s, duty cycle < 2%. 4 c o(cr) is de?ned as a ?xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de?ned as a ?xed capacitance with the same stored energy as c oss with v ds = 67% of v (br)dss . to calculate c o(er) for any value of v ds less than v (br)dss, use this equation: c o(er) = -1.65e-7/v ds ^2 + 5.51e-8/v ds + 2.03e-10. 6 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) microsemi?reserves?the?right?to?change,?without?notice,?the?speciications?and?information?contained? herein. g d s unit v v/c ? v mv/c ana unit s pf nc ns unit av ns c a v/ns min typ max 500 0 .60 0.064 0.075 2.5 4 5 -10 250 1000 100 min typ max 55 11600 160 1250 725 365 290 65 130 45 55 120 39 min typ max 75 230 1.0 310 570 1.48 3.85 11.3 16.6 20 test conditions v gs = 0v , i d = 250a reference to 25c, i d = 250a v gs = 10v , i d = 37a v gs = v ds , i d = 2.5ma v ds = 500v t j = 25c v gs = 0v t j = 125c v gs = 30v test conditions v ds = 50v , i d = 37a v gs = 0v , v ds = 25v f = 1mhz v gs = 0v , v ds = 0v to 333v v gs = 0 to 10v , i d = 37a, v ds = 250v resistive?switching v dd = 333v , i d = 37a r g = 2.2 ? 6 , v gg = 15v test conditions mosfet symbol showing the integral reverse p-n junction diode (body diode) i sd = 37a , t j = 25c, v gs = 0v t j = 25c t j = 125c i sd = 37a 3 t j = 25c v dd = 100v t j = 125c di sd / dt = 100a/s t j = 25c t j = 125c i sd 37a, di/dt 1000a/s, v dd = 333v, t j = 125c parameter drain-source breakdown voltage breakdown voltage temperature coef?cient drain-source on resistance 3 gate-source threshold voltage threshold voltage temperature coef?cient zero gate voltage drain current gate-source leakage current parameter forward transconductance input capacitance reverse transfer capacitance output capacitance effective output capacitance, charge related effective output capacitance, energy related total gate charge gate-source charge gate-drain charge turn-on delay time current rise time turn-off delay time current fall time parameter continuous source current (body diode) pulsed source current (body diode) 1 diode forward voltage reverse recovery time reverse recovery charge reverse recovery current peak recovery dv/dt symbol v br(dss) ? v br(dss) / ? t j r ds(on) v gs(th) ? v gs(th) / ? t j i dss i gss symbol g fs c iss c rss c oss c o(cr) 4 c o(er) 5 q g q gs q gd t d(on) t r t d(off) t f symbol i s i sm v sd t rr q rr i rrm dv/dt 050-8126 rev c 05-2009 APT75F50B2_l downloaded from: http:///
t j = 125c t j = 25c t j = -55c v gs = 10v v ds > i d(on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 37a t j = 125c t j = 25c t j = -55c c oss c iss i d = 37a v ds = 400v v ds = 100v v ds = 250v t j = 125c t j = 25c t j = -55c t j = 150c t j = 25c t j = 150c c rss v gs = 7 & 10v 5.5v 6v 5v t j = 125c 6.5v v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-source on resistance i d , drain current (a) i sd, reverse drain current (a) c, capacitance (pf) i d , drain current (a) i d , drian current (a) v ds(on) , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure?1,??output?characteristics?? figure?2,??output?characteristics t j , junction temperature (c) v gs , gate-to-source voltage (v) figure?3,??r ds(on) ?vs?junction?temperature? figure?4,??transfer?characteristics i d , drain current (a) v ds , drain-to-source voltage (v) figure?5,??gain?vs?drain?current? figure?6,?capacitance?vs?drain-to-source?voltage q g , total gate charge (nc) v sd , source-to-drain voltage (v) figure?7,?gate?charge?vs?gate-to-source?voltage? figure?8,?reverse?drain?current?vs?source-to-drain?v oltage 0 5 10 15 20 25 0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 0 100 200 300 400 500 0 50 100 150 200 250 300 350 400 0 0.3 0.6 0.9 1.2 1.5 300250 200 150 100 50 0 2.52.0 1.5 1.0 0.5 0 100 8060 40 20 0 1614 12 10 86 4 2 0 140120 100 8060 40 20 0 250200 150 100 50 0 20,00010,000 1000 100 10 200180 160 140 120 100 8060 40 20 0 050-8126 rev c 05-2009 APT75F50B2_l downloaded from: http:///
microsemi's products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. to-264?(l)?package?outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drai n 2-plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drai n 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) e3 100% sn plated t-max ? ?(b2)?package?outline 1ms 100ms r ds(on) 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 scaling for different case & junction temperatures: i d = i d(t c = 25 c) *( t j - t c )/125 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : t 1 = pulse duration dc line 100s i dm 10ms 13s 100s i dm 100ms 10ms 13s r ds(on) dc line t j = 150c t c = 25c 1ms i d , drain current (a) v ds , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure?9,?forward?safe?operating?area? figure?10,?maximum?forward?safe?operating?area z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure?11.?maximum?effective?transient?thermal?impedance?junction-to-case?vs?pulse?duration i d , drain current (a) 1 10 100 800 1 10 100 800 300100 10 1 0.1 0.140.12 0.10 0.08 0.06 0.04 0.02 0 300100 10 1 0.1 APT75F50B2_l t j = 125c t c = 75c 050-8126 rev c 05-2009 downloaded from: http:///
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